Magnachip's third-gen 200V Medium Voltage MOSFETs are suitable for light EV motor controllers and industrial power supplies.

Magnachip Semiconductor Corp. has introduced its third-generation 200V Medium Voltage (MV) metal-oxide-semiconductor field-effect transistors (MOSFETs) for light electric vehicle (LEV) motor controllers and industrial power supplies.

To maximize energy efficiency in power devices, Magnachip s new 200V MOSFETs incorporate third-generation trench MOSFET technology. The capacitance was reduced by 50% compared to the previous generation 100V MV MOSFET and the enhanced design of the core cell and termination helps lower RDS(on) and total gate charge to achieve a high figure of merit.

In addition, these third-generation MOSFETs are available in surface mount device TO-Leadless Package (TOLL), M2PAK and TO-220 of a through-hole type respectively to reduce product size and enhance heat dissipation. Furthermore, the energy efficiency of these MOSFETs is greatly increased by fast switching and high power density. Coupled with a guaranteed operating junction temperature from -55°C up to 175°C and a high level of avalanche ruggedness, these MOSFETs are well-suited for LEV motor controllers and industrial power supplies requiring high efficiency and stable power supply.

10/17-19 EAC