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Gallium Semiconductor has launched the GTH2e-2425300P ISM CW amplifier, a 2.4-2.5GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT) that brings a new level of efficiency for a wide range of industrial, scientific, and medical (ISM) applications, including semiconductor plasma sources and microwave plasma chemical vapor deposition (MPCVD) equipment for synthetic diamond production.

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